The Rate of Charge Tunneling in EGaln Junctions is not Sensitive to Halogen Substituents at the SAM//Ga2o3 Interface
Publication information:
M. Baghbanzadeh, P. F. Pieters, Y. Li, D. Collison, and G. M. Whitesides. 2018. “The Rate of Charge Tunneling in EGaln Junctions Is Not Sensitive to Halogen Substituents at the SAM Ga2o3 Interface”. ACS Nano, 12, Pp. 10221-30
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