SAMs

J. Park, M.S. Kodaimati, L. Belding, S.E. Root, G.C. Schatz, and G. M. Whitesides. 2022. “Controlled Hysteresis of Conductance in Molecular Tunneling Junctions”. ACS Nano, 16, Pp. 4206-16

B. J. Cafferty, Y. Li, M. Baghbanzadeh, D. Rappoport, M. H. Beyzavi, and G. M. Whitesides. 2019. “Charge Transport through Self-Assembled Monolayers of Monoterpenoids”. Angew. Chem. Int. Ed. Eng., 58, Pp. 8097-8102

M. Baghbanzadeh, P. F. Pieters, Y. Li, D. Collison, and G. M. Whitesides. 2018. “The Rate of Charge Tunneling in EGaln Junctions Is Not Sensitive to Halogen Substituents at the SAM Ga2o3 Interface”. ACS Nano, 12, Pp. 10221-30

J. Drelich, J.L. Wilbur, J.D. Miller, and G. M. Whitesides. 1996. “Contact Angles for Liquid Drops at a Model Heterogeneous Surface Consisting of Alternating and Parallel Hydrophobic Hydrophilic Strips”. Langmuir, 12, Pp. 1913-22

J. Rao, L. Yan, B. Xu, and G. M. Whitesides. 1999. “Using Surface Plasmon Resonance to Study the Binding of Vancomycin and Its Dimer to Self-Assembled Monolayers Presenting D-Ala-D-Ala”. J. Am. Chem. Soc., 121, Pp. 2629-30

M. Mrksich and G. M. Whitesides. 1996. “Using Self-Assembled Monolayers to Understand the Interactions of Man-Made Surfaces With Proteins and Cells”. Ann. Rev. Biophys. Biomol. Struct., 25, Pp. 55-78

J.L. Wilbur and G. M. Whitesides. 1999. “Self-Assembly and Self-Assembled Monolayers in Micro- and Nanofabrication”. In Nanotechnology, edited by G. Timp, Pp. 331-69. New York: Springer-Verlag

S. Palacin, P. C. Hidber, J.-P. Bourgoin, C. Miramond, C. Fermon, and G. M. Whitesides. 1996. “Patterning With Magnetic Materials at the Micron Scale”. Chem. Mat., 8, Pp. 1316-25

L. Isaacs, D. N. Chin, N. B. Bowden, Y. Xia, and G. M. Whitesides. 1999. “Self-Assembling Systems on Scales from Nanometers to Millimeters: Design and Discovery”. In Supramolecular Materials and Technologies, edited by D. N. Reinhoudt, 4:Pp. 1-46. New York: John Wiley & Sons Ltd.

Y. Xia, X-M. Zhao, and G. M. Whitesides. 1996. “Pattern Transfer: Self-Assembled Monolayers As Ultrathin Resists”. Microelec. Eng., 32, Pp. 255-68